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LED Driver Selection Substitute Daquan recommend
When using a domestic alternative to the FGH75N65SHDT pressure-resistant IGBT single tube, emergency energy storage power supply engineers need to pay attention to several key attributes. For example, the performance parameters of the pressure-resistant IGBT single tube: whether the rated current reaches 75A, whether the rated voltage reaches 650V, etc., all of which are closely related to the efficiency of the device. It should be noted that off-state charge quantity and safe operating area (SOA) are also priority factors.
The FHA75T65A has successfully replaced the FGH75N65SHDT and is widely used in many national emergency energy storage power supply factories. Here are its detailed technical specifications:
1. N-channel trench gate cutoff type
2. ID (Tc=100℃): 75A; BVCES: 650V
3. VCEsat typical value: 1.75V-typ, <2.0V
4. Low switching loss
5. TrenchFieldStop technology, etc.
In order to optimize the control performance of the emergency energy storage power supply circuit, Feihong Semiconductor recommends choosing the FHA75T65A pressure-resistant IGBT single tube. This pressure-resistant IGBT with a rated current of 75A and a rated voltage of 650V can effectively overcome difficult problems such as product heat dissipation and low reliability.
To help electronic factories overcome circuit development issues, the FHA75T65A pressure-resistant IGBT single tube from Feihong Semiconductor is reliable. It provides assurance for applications such as medium frequency inverters and outdoor mobile power supplies. For free sample services, please contact 400-831-6077!









