Which pressure-resistant IGBT manufacturer can offer a replacement for the FGH75N65SHDT IGBT model to be used in the circuit diagram of the vehicle inverter? After all, the pressure-resistant IGBT is the main attribute of the vehicle inverter.

On March 19, 2023, the pressure-resistant IGBT manufacturer, Feihong Semiconductor, received an inquiry from Mr. Cao from Qinzhou City, Guangxi Province.

According to the description: The circuit diagram of the vehicle inverter manufacturer's product previously used the FGH75N65SHDT IGBT model. Currently, they are looking for a pure domestic pressure-resistant IGBT manufacturer to supply the FHA75T65A pressure-resistant IGBT model to replace the FGH75N65SHDT IGBT model in the vehicle inverter.

In order to consult with Feihong Semiconductor, the intention is to provide a suitable pure domestic pressure-resistant IGBT solution for use in the vehicle inverter and capable of replacing the FGH75N65SHDT IGBT model.

After understanding this, the Feihong Semiconductor pressure-resistant IGBT manufacturer immediately instructed the team to plan according to Mr. Cao's vehicle inverter circuit diagram requirements.

They planned a suitable and appropriate pure domestic pressure-resistant IGBT for use in the vehicle inverter. In combination with the situation in Mr. Cao from Qinzhou City, Guangxi Province, it was recommended to use the FHA75T65A instead of the FGH75N65SHDT IGBT model in the vehicle inverter circuit diagram.

Why is the FHA75T65A IGBT model?

Because the FHA75T65A IGBT model not only has the Trench Field Stop technology but also features the Trench-FS technology and excellent Vcesat saturation voltage drop advantages.

Furthermore, the FHA75T65A model has current and voltage parameter characteristics of 75A and 650V, making this pressure-resistant IGBT model very suitable for use in vehicle inverters.

Importantly, the pressure-resistant IGBT provides stable and reliable control in vehicle inverters with good quality!

Of course, as a circuit diagram engineer for the vehicle inverter, it is necessary to know the detailed parameters of this pure domestic pressure-resistant IGBT, FHA75T65A:

The FHA75T65A is a channel N-type trench gate-off type with 75A and 650V, typical VCEsat value: 1.75V-typ, <2.0V, ID (Tc=100℃): 75A; BVCES: 650V; IF (A) (Tc=25℃): 150A; IF (A) (Tc=100℃): 75A.

Finally, the Qinzhou City, Guangxi Province Feihong Semiconductor pressure-resistant IGBT manufacturer successfully completed Mr. Cao's pressure-resistant IGBT supply matter.

After testing, Mr. Cao explained his reasons for choosing Feihong Semiconductor:

He intended to find the FHA75T65A pressure-resistant IGBT model in Qinzhou City, Guangxi Province to enhance the performance of the vehicle inverter. Mr. Cao, the responsible person of the vehicle inverter manufacturer in Qinzhou City, Guangxi Province, chose Feihong Semiconductor due to its good service.

Feihong Semiconductor provides a service for direct sales of in-stock pressure-resistant IGBTs, solving the required pressure-resistant IGBTs for vehicle inverters. Moreover, the quotation for pure domestic pressure-resistant IGBTs is reasonable.

Mr. Cao said that Feihong Semiconductor's measures for pressure-resistant IGBTs left him deeply grateful, and their demeanor was amiable. He will continue to procure the FHA75T65A pressure-resistant IGBT model in the future.

The pure domestic FHA75T65A model can be used in vehicle inverters. Feihong Semiconductor's pressure-resistant IGBT manufacturer genuinely provides reliable component supply guarantees for high-frequency inverters, outdoor mobile power supplies, and other electronic manufacturers. For more details, you can search "Feihong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!