The high-power IGBT single tube is the core component of the photovoltaic inverter, which can directly affect its circuit stability. Through what channels can we select a suitable domestic high-power IGBT single tube for the photovoltaic inverter circuit?
On January 23, 2023, Feihong Semiconductor High-Power IGBT Single Tube Company received an inquiry from Mr. Xu from Ningxia Province.
According to the description, Mr. Xu intended to find a domestic high-power IGBT single tube company to supply FHA75T65A model high-power IGBT single tubes for use in the photovoltaic inverter to achieve IGBT domestic replacement.
In general, Mr. Xu consulted Feihong High-Power IGBT Single Tube Company with the intention of obtaining a domestic high-power IGBT single tube solution suitable for photovoltaic inverters and capable of replacing the Fairchild FGH75N65SHDT model IGBT.
After understanding the situation, Feihong Semiconductor High-Power IGBT Single Tube Company immediately adjusted its team according to Mr. Xu's photovoltaic inverter circuit diagram requirements.
A reasonable and suitable domestic high-power IGBT single tube for photovoltaic inverters was drafted. Considering Mr. Xu's situation in Ningxia Province, it was recommended to use the FHA75T65A domestic alternative to the Fairchild FGH75N65SHDT model IGBT in the photovoltaic inverter circuit diagram.
Why is the FHA75T65A model IGBT?
Because the FHA75T65A model IGBT not only has the Trench Field Stop II technology characteristic but also has advantages such as positive temperature coefficient and low gate charge.
Moreover, the FHA75T65A model has current and voltage parameter characteristics of 75A and 650V, making this high-power IGBT single tube highly suitable for use in photovoltaic inverters.
Importantly, the FHA75T65A model IGBT has high recognition in the application of photovoltaic inverters, providing stable and reliable control.
Of course, as a photovoltaic inverter circuit diagram engineer, it is necessary to clearly understand the detailed parameters of this domestic high-power IGBT single tube:
FHA75T65A is a field N-channel trench gate-off type with 75A and 650V, typical VCEsat value: 1.75V-typ, <2.0V, ID (Tc=100℃): 75A; BVCES: 650V; IF (A) (Tc=25℃): 150A; IF (A) (Tc=100℃): 75A.
Ultimately, the Ningxia Province Feihong Semiconductor High-Power IGBT Single Tube Company successfully met Mr. Xu's high-power IGBT single tube supply target.
After sampling, Mr. Xu explained the reason for choosing Feihong Semiconductor:
Intended to find the FHA75T65A model high-power IGBT single tube in Ningxia Province to increase the performance of the photovoltaic inverter, Mr. Xu, the responsible person of the Ningxia Province photovoltaic inverter manufacturer, chose Feihong Semiconductor due to excellent service.
Feihong Semiconductor provides direct sales services of domestic high-power IGBT single tube manufacturers, solving the required high-power IGBT single tubes for photovoltaic inverters, and the quotations for domestic high-power IGBT single tubes are reasonable.
Mr. Xu said that Feihong Semiconductor's service attitude, being helpful and dedicated, made him feel satisfied and willing to entrust them with the customization of the FHA75T65A model high-power IGBT single tube.
Photovoltaic inverter manufacturers choose Feihong Semiconductor High-Power IGBT Single Tube Company to provide the most reliable component supply guarantee for pulse width modulation inverters, online interactive UPSs, and other electronic manufacturers. For more details, you can search "Feihong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!