The core point of the three-phase motor drive is the high-voltage IGBT discrete device. From this, we can see that it is necessary to know which high-voltage IGBT discrete device manufacturers can provide suitable high-voltage IGBT discrete devices for three-phase motor drives.

On August 18, 2023, the high-voltage IGBT discrete device manufacturer of Feihong Semiconductor received an inquiry from Han Sheng in Huangshi City, Hubei Province.

According to the description, Mr. Han was exploring domestic high-voltage IGBT discrete devices to replace the NCE20TD60BF IGBT model. He hoped to find a high-voltage IGBT discrete device with 20A and 650V, and excellent quality.

It can be seen that Mr. Han consulted the high-voltage IGBT discrete device manufacturer of Feihong Semiconductor, hoping they could provide a domestic high-voltage IGBT discrete device solution suitable for three-phase motor drive applications and capable of replacing the NCE20TD60BF IGBT model.

After understanding, the high-voltage IGBT discrete device manufacturer of Feihong Semiconductor immediately arranged a team around Mr. Han's three-phase motor drive circuit diagram requirements.

An appropriate domestic high-voltage IGBT discrete device suitable for three-phase motor drive was formulated. Combined with the actual situation of Mr. Han in Huangshi City, Hubei Province, the three-phase motor drive circuit diagram suggests using FHF20T60A instead of the NCE20TD60BF IGBT model.

Why is the FHF20T60A IGBT model?

Because the FHF20T60A IGBT model not only has positive temperature coefficient characteristics but also low turn-off loss and low switching loss.

At the same time, the FHF20T60A model has current and voltage parameters of 20A and 650V. This characteristic of high-voltage IGBT discrete device is very suitable for use in three-phase motor drive.

Importantly, the FHF20T60A IGBT model has high recognition in the application of three-phase motor drive and steady control.

Of course, as a three-phase motor drive circuit engineer, you must understand the detailed parameters of this domestic high-voltage IGBT discrete device FHF20T60A:

FHF20T60A is a field N-channel trench gate cutoff type with 20A, 650V, VCEsat typical value: 1.49V, <1.7V, ID (Tc=100℃): 20A; BVCES: 650V; IF(A)(Tc=25℃): 20A; IF(A)(Tc=100℃): 10A.

Finally, the high-voltage IGBT discrete device manufacturer of Huangshi City, Feihong Semiconductor successfully met Mr. Han's supply idea of high-voltage IGBT discrete devices.

After testing, Mr. Han explained the reason for choosing Feihong Semiconductor:

He hoped to find the FHF20T60A high-voltage IGBT discrete device in Huangshi City, Hubei Province, to enhance the performance of the three-phase motor drive. Mr. Han, the responsible person of the three-phase motor drive manufacturer in Huangshi City, chose Feihong Semiconductor due to its excellent service.

Feihong Semiconductor provides high-voltage IGBT discrete device manufacturer direct sales services with ready stock, solving the required high-voltage IGBT discrete devices for three-phase motor drive, and the price of domestic high-voltage IGBT discrete devices is reasonable.

Mr. Han said that Feihong Semiconductor provided wholehearted and sincere service in customizing high-voltage IGBT discrete devices; he hopes they will continue to persist and innovate, providing supply with excellent parameters of the FHF20T60A model.

Three-phase motor drive manufacturers choose the high-voltage IGBT discrete device manufacturer of Feihong Semiconductor, sincerely providing the most reliable component supply guarantee for frequency converter, online UPS and other electronic manufacturers. For more details, you can search "Feihong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!