For the live mobile energy storage power supply that requires a high-power IGBT with parameters of 40A and 600V, which method should be used to select a suitable high-power IGBT for the live mobile energy storage power supply circuit?

On January 14, 2023, the high-power IGBT factory of Feihong Semiconductor received an inquiry from Mr. Di from Xuzhou.

According to his description, Mr. Di intended to find a domestic high-power IGBT factory to ship the FHA40T65A model high-power IGBT for use in the live mobile energy storage power supply, achieving IGBT replacement.

Thus, he consulted the high-power IGBT factory of Feihong Semiconductor, expecting it to provide a domestic high-power IGBT solution suitable for the live mobile energy storage power supply circuit and capable of replacing the FGH40N60SFD model IGBT.

After understanding the situation, the high-power IGBT factory of Feihong Semiconductor immediately dispatched a team to combine with Mr. Di's requirements for the live mobile energy storage power supply circuit.

They formulated a domestic high-power IGBT that fits the live mobile energy storage power supply. Considering Mr. Di's actual circumstances, they recommended using the FHA40T65A model IGBT instead of the FGH40N60SFD model IGBT for the live mobile energy storage power supply circuit.

Why is the FHA40T65A model IGBT?

Because the FHA40T65A model IGBT not only has the characteristic of low gate charge but also features fast recovery diodes in parallel, low switching loss, etc.

Moreover, the FHA40T65A model has current and voltage parameter characteristics of 40A and 600V. The high-power IGBT with these characteristics is suitable for use in live mobile energy storage power supplies.

What’s more, the quality of the FHA40T65A model IGBT is top-notch, and it is a high-quality high-power IGBT with excellent lifespan!

Of course, as a technical staff member of the live mobile energy storage power supply circuit, it is essential to know the detailed parameters of this domestic high-power IGBT FHA40T65A:

The FHA40T65A is a trench gate field-stop type IGBT with 40A and 600V, VCEsat typical value: 1.51V, <1.85V, ID (Tc=100℃): 40A; BVCES: 600V; IF (A) (Tc=25℃): 40A; IF (A) (Tc=100℃): 20A.

Finally, the high-power IGBT factory of Xuzhou Feihong Semiconductor successfully handled Mr. Di's high-power IGBT supply activities.

After testing, Mr. Di explained why he chose Feihong Semiconductor:

Based on recommendations from peers, he learned that Feihong Semiconductor is a reliable high-power IGBT factory in Xuzhou, so he chose the high-power IGBT FHA40T65A model for use in the live mobile energy storage power supply.

Feihong Semiconductor provides a service of direct sales by manufacturers offering stock high-power IGBTs, solving the need for high-power IGBTs in live mobile energy storage power supplies. Moreover, the quotation for domestic high-power IGBTs is reasonable.

Mr. Di said that Feihong Semiconductor's service attitude was enthusiastic and thoughtful, making him feel grateful enough to entrust them with customizing the FHA40T65A high-power IGBT.

Live mobile energy storage power supply manufacturers choose the high-power IGBT factory of Feihong Semiconductor to provide strong component supply guarantees for electronic manufacturers such as voltage-source inverters and online UPS. For more details, you can search "Feihong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!