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Article Category:IGBT Information Release time:2023-10-28 Number of page views:885 Share:

Which high-voltage IGBT manufacturer can provide a pure domestic alternative for the FGH75N65SHDT IGBT model used in passive inverter circuits?


On September 5, 2023, the high-voltage IGBT manufacturer Hong Semiconductor received an inquiry from Ms. Li in Shangqiu.


According to her description, the 75A and 650V parameters are key points of concern for Mr. Li, a designer at a passive inverter manufacturer, who is looking for a pure domestic high-voltage IGBT alternative factory. She intends to find a high-quality high-voltage IGBT manufacturer.


In short, Ms. Li consulted Hong Semiconductor's high-voltage IGBT manufacturer, expecting them to provide a pure domestic high-voltage IGBT solution suitable for use in passive inverters and capable of replacing the FGH75N65SHDT IGBT model from Fairchild.


After understanding this, Hong Semiconductor immediately dispatched a team based on the circuit diagram requirements provided by Ms. Li.


They arranged a suitable pure domestic high-voltage IGBT that fits the passive inverter. Based on Ms. Li's situation in Shangqiu, it was recommended to use the FHA75T65A as a pure domestic alternative to the FGH75N65SHDT IGBT in the passive inverter circuit diagram.


Why is the FHA75T65A model IGBT chosen?


Because the FHA75T65A model IGBT not only has the characteristics of a fast recovery diode connected in parallel but also features advantages such as a fast recovery diode connected in parallel, Trench Field Stop Technology, etc.


Furthermore, the FHA75T65A model has current and voltage parameters of 75A and 650V, making it highly suitable for use in passive inverters.


Importantly, the FHA75T65A model IGBT is highly detailed and has excellent quality!


Of course, as a circuit diagram designer for passive inverters, one must understand the detailed parameters of this pure domestic high-voltage IGBT, the FHA75T65A:


The FHA75T65A is a field N-channel trench gate cutoff type with 75A and 650V, VCEsat typical value: 1.75V-typ, <2.0V, ID (Tc=100℃): 75A; BVCES: 650V; IF (A) (Tc=25℃): 150A; IF (A) (Tc=100℃): 75A.


Finally, the Shangqiu Hong Semiconductor high-voltage IGBT manufacturer successfully delivered the required high-voltage IGBT supply for Ms. Li.


After testing, Ms. Li explained why she chose Hong Semiconductor:


Ms. Li combined analysis and judgment to choose Hong Semiconductor because the FHA75T65A model is suitable for use in passive inverters.


Hong Semiconductor provides direct sales services for high-voltage IGBT manufacturers, solving the need for high-voltage IGBTs in passive inverters, and the quotations for pure domestic high-voltage IGBTs are reasonable.


Ms. Li stated that Hong Semiconductor’s attitude and professionalism made her feel satisfied when they custom-made the FHA75T65A high-voltage IGBT model for her.


The pure domestic FHA75T65A model can be used in passive inverters. Hong Semiconductor high-voltage IGBT manufacturers strive to provide reasonable component supply guarantees for electronic manufacturers such as passive inverters and outdoor mobile energy storage power supplies. For more details, you can search "Hong Semiconductor" on Baidu or call the free trial hotline: 400-831-6077!

*All relevant knowledge of this site is for your reference and learning purposes only. Part of it comes from the Internet, and its copyright belongs to the original author and

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